J111 Jfet



  1. J111 Jfet
  2. J111 Jfet Datasheet
  3. J111 Jfet

J111 datasheet, J111 pdf, J111 data sheet, datasheet, data sheet, pdf, Calogic, N-Channel JFET Switch. J111, datasheet for J111 - SINGLE N-CHANNEL JFET provided by Linear Integrated Systems. J111 pdf documentation and J111 application notes, selection guide. J111 MOSFET transistor.

Главная > Каталог > Дискретные полупроводниковые элементы > Полевые транзисторы с p-n переходом (JFET) > J111,126

  • Маркировка: J111,126
  • Описание: TRANSISTOR N-CH 40V 50MA SOT54
  • Производитель:NXP Semiconductors
  • Даташит:J111,126
  • Срок поставки: 5-10 дней
  • Склад:9296шт.
J111 jfet
ПроизводительNXP Semiconductors
Current - Drain (Idss) @ Vds (Vgs=0)20mA @ 15V
Drain to Source Voltage (Vdss)40V
Current Drain (Id) - Max-
FET TypeN-Channel
Voltage - Breakdown (V(BR)GSS)40V
Voltage - Cutoff (VGS off) @ Id10V @ 1µA
Input Capacitance (Ciss) @ Vds6pF @ 10V (VGS)
Resistance - RDS(On)30 Ohm
Тип монтажаThrough Hole
УпаковкаCut Tape (CT)
Исполнение / КорпусTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max400mW
Supplier Device PackageTO-92-3
КоличествоЦена
129.24
1025.77
2522.75
10019.84
25017.27
50014.7
100011.77
J111
J111,126
NXP Semiconductors
Кол-во: 500 000 шт.
Цена за 1 шт: 5
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J111 jfet

J111 Jfet

J111 MOSFET transistor.
Pinout. Datasheet.

J111 Jfet Datasheet

J111 Jfet

J111 Jfet

Package: TO92, SOT-23.
Marking code for SOT-23 - C1
Type of J111 transistor: JFET
Type of control channel: N - Channel
Maximum power dissipation (PD):0,36 W
Maximum drain-source voltage (VDSS): 35 V
Gate-source forward voltage (VGS(f)): 0,7 V.
Maximum continuous drain current (ID): 50mA
Maximum pulsed drain current (IDM): 200mA
Maximum junction temperature (Tj): 150°C
Rise Time(tR): 6nS
Input Capacitance (Ciss):28pF
Output Capacitance (Coss):5pF
Maximum drain-source on-state resistance (RDS): 30 Ohm
Forward Transconductance(gfs):6